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dm c6070lnd document number: d s38051 rev. 2 - 2 1 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product complementary pair enhancement mode mosfet powerdi ? product summary device v (br)dss r ds(on) max i d max t a = + 25c q1 6 0v 85 m ? @ v gs = 10 v 3.1a 120 m ? @ v gs = 4 .5v 2.7a q2 - 6 0v 150 m ? @ v gs = - 10 v - 2.4a 2 5 0 m ? @ v gs = - 4.5 v - 1.8a description this new generation mosfet is designed to minimize the on - state resistance (r ds( on ) ) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? power m anagement f unctions ? analog switch features ? low on - resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? complementary pair mosfet ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note mechanical data ? case: power di ? 3333 - 8 ? case material: molded plastic, green molding compound. ? ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin a nnealed over copper leadframe; solderable per mil - std - 202, method 208 ? weight: 0.0 72 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm c6070l nd - 7 power di3333 - 8 2 , 000 /tape & reel dm c6070l nd - 13 power di3333 - 8 3 , 000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http : // www.diodes.com/products/packages.html . marking information b ottom view c6 a = product type marking code yyww = date code marking yy = last two digits of year (ex: 1 5 for 201 5 ) ww = week code (01 to 53) equivalent circuit n - channel mosfet p - channel mosfet power di3333 - 8 c6a top view powerdi is a registered trademark of diodes incorporated. c60 y y w w d 1 s 1 g 1 d 2 s 2 g 2 d1 g2 s2 g1 s1 pin 1 d2 d2 d1
dm c6070lnd document number: d s38051 rev. 2 - 2 2 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product maximum ratings q1 n - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 6 0 v gate - source voltage v gss 20 v continuous drain current (note 5 ) v gs = 10 v steady state t a = + 25c t a = + 70c i d 3.1 2.5 a t<10s t a = + 25c t a = + 70c i d 3.9 3.1 a maximum body diode forward current (note 5 ) i s 2 a pulsed drain curren t ( 10 d m 15 a maximum ratings q2 p - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 6 0 v gate - source voltage v gss 20 v continuous drain current (note 5 ) v gs = - 10 v steady state t a = + 25c t a = + 70c i d - 2.4 - 1.9 a t<10s t a = + 25c t a = + 70c i d - 2.9 - 2.3 a maximum body diode forward current (note 5 ) i s - 2 a pulsed drain curren t ( 10 d m - 12 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 1.4 w thermal resistance, junction to ambient (note 5 ) s teady state r ja 91 c/w t<10s 60 thermal resistance, junction to case (note 5 ) r j c 32 operating and storage temperature range t j, t stg - 55 to +150 c note: 5. device mounted on fr - 4 substrate pc b oard, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate .
dm c6070lnd document number: d s38051 rev. 2 - 2 3 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product electrical characteristics q1 n - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss 6 0 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current t j = + 25c i dss ? ? 1 a v ds = 6 0 v, v gs = 0v gate - source leakage i gss ? ? 1 0 0 n a v gs = 16 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs (th) 1 ? 3 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? 60 85 m ? v gs = 10 v, i d = 1.5 a 72 120 v gs = 4 .5 v, i d = 0.5 a forward transfer admittance |y fs | ? 3.7 ? s v ds = 5 v, i d = 1.5 a diode forward voltage v sd ? 0.7 1. 2 v v gs = 0v, i s = 3 a dynamic characteristics (note 7 ) input capacitance c iss ? 731 ? pf v ds = 20 v, v gs = 0v , f = 1mhz output capacitance c oss ? 34 ? pf reverse transfer capacitance c rss ? 23 ? pf gate resistance r g ? 1.3 ? ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 10v) q g ? 11.5 ? nc v ds = 30 v, i d = 3 a total gate charge ( v gs = 4.5 v) q g ? 5.2 ? nc gate - source charge q gs ? 2.1 ? nc gate - drain charge q gd ? 1.5 ? nc turn - on delay time t d( on ) ? 9.6 ? ns v gs = 10v , v ds = 30 v , r g = 50 ? , r l = 2 0 ? turn - on rise time t r ? 11 ? ns turn - off delay time t d( off ) ? 61 ? ns turn - off fall time t f ? 21 ? ns notes: 6 . short duration pulse test used to minimize self - heating effect . 7 . guaranteed by design. not subject to production testing .
dm c6070lnd document number: d s38051 rev. 2 - 2 4 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product 0.0 2.0 4.0 6.0 8.0 10.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic gs = 2.8v v gs = 3.0v v gs = 3.5v v gs = 10.0v v gs = 4.5v v gs = 4.0v 0 . 03 0.04 0 . 05 0.06 0.07 0.08 0.09 0.1 0 2 4 6 8 10 r ds(on) , drain - source on - resistance ( d , drain - source current (a) figure 3 . typical on - resistance vs. drain current and gate voltage v gs = 4.0v v gs = 10 . 0 v 0 0.05 0.1 0.15 0.2 0 2 4 6 8 10 r ds(on) , drain - source on - resistance ( d , drain current(a) figure 5 . typical on - resistance vs. drain current and temperature v gs = 4.5v 150 o c 125 o c - 55 o c 25 o c 85 o c 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = 10.0v, i d = 5.0a v gs = 4.5v, i d = 2.0a 0 0.03 0.06 0.09 0 . 12 0.15 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 1 . 5 a i d = 0.5a 0 2 4 6 8 10 0 1 2 3 4 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2 . typical transfer characteristic v ds = 5.0v - 55 o c 25 o c 85 o c 150 o c 125 o c
dm c6070lnd document number: d s38051 rev. 2 - 2 5 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product 0.001 0 . 01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 c =25 gs = 10 v r ds(on) limited dc p w =10s p w = 1 s p w =100ms p w =10ms p w =1ms p w =100 s 0 2 4 6 8 10 0 2 4 6 8 10 12 v gs (v) q g (nc) figure 11. gate charge v ds = 30v, i d = 3a 10 100 1000 10000 0 5 10 15 20 25 30 c t , junction capacitance ( p f) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 0.3 0 . 6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t a = 125 o c t a = 150 o c t a = 85 o c t a = 25 o c t a = - 55 o c v gs = 0v 0.5 1 1.5 2 2.5 3 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 a i d = 1 ma 0 0.03 0.06 0.09 0.12 0.15 - 50 - 25 0 25 50 75 100 125 150 r ds(on), drain - source on - resistance ( j , junction temperature ( gs = 10.0v, i d = 5.0a v gs = 4.5v, i d = 2.0a
dm c6070lnd document number: d s38051 rev. 2 - 2 6 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product 0.001 0 . 01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r ja (t)=r(t) * r ja r ja =134
dm c6070lnd document number: d s38051 rev. 2 - 2 7 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product electrical characteristics q 2 p - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 6 0 ? ? v v gs = 0v, i d = - 250a zero gate voltage drain current t j = + 25c i dss ? ? - 1 a v ds = - 6 0 v, v gs = 0v gate - source leakage i gss ? ? 10 0 na v gs = 16 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 1 ? - 3 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) ? 115 150 m ? v gs = - 10 v, i d = - 1 a 170 250 v gs = - 4.5 v, i d = - 0.5 a forward transfer admittance |y fs | ? 2.8 ? s v ds = - 5 v, i d = - 1 a diode forward voltage v sd ? - 0.7 - 1.2 v v gs = 0v, i s = - 2 a dynamic characteristics (note 9 ) input capacitance c iss ? 612 ? pf v ds = - 20 v, v gs = 0v , f = 1mhz output capacitance c oss ? 36 ? pf reverse transfer capacitance c rss ? 26 ? pf gate resistance r g ? 13 ? ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 10 v) q g ? 8.9 ? nc v ds = - 30 v, i d = - 2 a total gate charge ( v gs = - 4.5 v) q g ? 4.3 ? nc gate - source charge q gs ? 1.4 ? nc gate - drain charge q gd ? 1.7 ? nc turn - on delay time t d( on ) ? 7.6 ? ns v gs = - 10 v , v ds = - 30 v , r g = 50 ? , i d = - 1a turn - on rise time t r ? 11.6 ? ns turn - off delay time t d( off ) ? 79.8 ? ns turn - off fall time t f ? 37.8 ? ns notes: 8 . short duration pulse test used to minimize self - heating effect . 9 . guaranteed by design. not subject to production testing .
dm c6070lnd document number: d s38051 rev. 2 - 2 8 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product 0.6 0.8 1 1 . 2 1.4 1 . 6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ) figure 19 . on - resistance variation with temperature v gs = - 10.0v, i d = - 5.0a v gs = - 4 . 5 v, i d = - 2 . 0 a 0 2 4 6 8 10 0 1 2 3 4 5 i d , drain current (a) v gs , gate - source voltage (v) figure 15. typical transfer characteristic v ds = - 5 . 0 v 125 o c 150 o c - 55 o c 25 o c 85 o c 0 0 . 1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 18. typical on - resistance vs. drain current and temperature v gs = - 4.5v 125 o c 150 o c - 55 o c 25 o c 85 o c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 2 4 6 8 10 12 14 16 18 20 i = -1.0a d i = -0.5ma d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 17 typical drain-source on-resistance vs. gate-source voltage 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 v = -4.5v gs v = -10v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain source current (a) d figure 16 typical on-resistance vs. drain current and gate voltage 0.0 2.0 4.0 6.0 8.0 10.0 0 1 2 3 4 5 v = -4.0v gs v = -4.5v gs v = -10v gs v = -2.8v gs v = -3.0v gs v = -3.5v gs v = -2.5v gs i , d r a i n c u r r e n t ( a ) d v , drain -source voltage (v) ds figure 14 typical output characteristics
dm c6070lnd document number: d s38051 rev. 2 - 2 9 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product 10 100 1000 10000 0 5 10 15 20 25 30 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 22. typical junction capacitance f=1mhz c iss c oss c rss 0 . 001 0.01 0 . 1 1 10 100 0 . 1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 24. soa, safe operation area t j (max) =150 c =25 gs = 10 v r ds(on) limited dc p w = 10 s p w =1s p w = 100 ms p w =10ms p w =1ms p w =100 s 0 2 4 6 8 10 0 2 4 6 8 10 v gs (v) q g (nc) figure 23. gate charge v ds = - 30v, i d = - 2a 0 0 . 5 1 1.5 2 2.5 3 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 1ma i d = - 250 a 0 0.05 0.1 0.15 0 . 2 0.25 0.3 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( j , junction temperature ( gs = - 4.5v, i d = - 2.0a v gs = - 10 . 0 v, i d = - 5 . 0 a
dm c6070lnd document number: d s38051 rev. 2 - 2 10 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product 0.001 0.01 0.1 1 1e - 05 0 . 0001 0.001 0.01 0.1 1 10 100 1000 r ( t ), transient thermal resistance t1, pulse duration time (sec) figure 25 . transient thermal resistance d=0.9 r ja (t)=r(t) * r ja r ja =134
dm c6070lnd document number: d s38051 rev. 2 - 2 11 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. powerdi 3333 - 8 (type uxb) dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 -- b 0.25 0.40 0.32 c 0.10 0.25 0.15 d 3.20 3.40 3.30 d1 2.95 3.15 3.05 d2 0.10 0.35 0.23 e 3.20 3.40 3.30 e1 2.95 3.15 3.05 e2 0.10 0.30 0.20 e ? ? ? ? 0.65 l 0.35 0.55 0.45 a 0 12 10 all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. dimensions value (in mm) c 0.650 x 0.420 x1 2.370 y 0.730 y1 3.500 powerdi3333 - 8 (type uxb) powerdi3333 - 8 (type uxb) d e e1 d1 a c l l e2 b e d2 a1 a x1 y1 y c x y
dm c6070lnd document number: d s38051 rev. 2 - 2 12 of 12 www.diodes.com september 2015 ? diodes incorporated dm c6070lnd advanced information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or fore ign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorp orated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safe ty - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes in corporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2015 , diodes incorporated www.diodes.com

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